Ion implantation measurements with a noncontact nondestructive high frequency photoacoustic technique

A 1 MHz photoacoustic system is used to measure the doses of boron, phosphorus and arsenic ions implanted into silicon wafers over the range of 1011 to 1016 ions/cm2. The amorphization and residual damage produced by ion implantation seem to contribute principally to the photoacoustic signal. Experimental results and numerical simulations with a 1-dimensional model illuminate that the photoacoustic signal should rise suddenly when a buried disordered layer is present. (orig.)