Published 2012
| Version v1
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Creation of Silicon Carbide Diffusion Barriers by Means of Pulsed Laser Deposition
Description
Agenda: - Objective: Investigation of Ag diffusion in SiC layers - SiC coatings prepared by Pulsed Laser Deposition - Results for spherical and flat substrates - Challenge: Residual stresses in coatings - Summary and conclusions
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54071968.pdf
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Additional details
Publishing Information
- Imprint Title
- 6th International Topical Meeting on High Temperature Reactor Technology (HTR2012). Presentations
- Imprint Pagination
- 16 p.
- Report number
- INIS-JP--23M0007
Conference
- Title
- 6. International Topical Meeting on High Temperature Reactor Technology
- Acronym
- HTR2012
- Dates
- 28 Oct - 1 Nov 2012
- Place
- Tokyo (Japan)
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 54071968
- Subject category
- S21: SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- FEDERAL REPUBLIC OF GERMANY; FORSCHUNGSZENTRUM JUELICH; HTGR TYPE REACTORS; LASER RADIATION; RESIDUAL STRESSES; SILICON CARBIDES; SUBSTRATES
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; DEVELOPED COUNTRIES; ELECTROMAGNETIC RADIATION; EUROPE; GAS COOLED REACTORS; GERMAN FR ORGANIZATIONS; GRAPHITE MODERATED REACTORS; NATIONAL ORGANIZATIONS; RADIATIONS; REACTORS; SILICON COMPOUNDS; STRESSES; WESTERN EUROPE
Optional Information
- Notes
- Document from Juelich Preservation Project