Improving carrier transport in polymer films by incorporating MoS2 nanosheets
- 1. Advanced Materials Research Centre, India Institute of Technology Mandi, Kamand, Mandi 175005, Himachal Pradesh (India)
Description
This article presents the results of study of the carrier transport in thin films of two dimensional (2D) MoS2 and a polythiophene based polymer (P3HT) nanohybrids. Temperature dependent electrical measurements within a temperature range from 113 K to 293 K have been carried out to elucidate the effect of 2D MoS2 on charge transport. We experimentally demonstrate that the charge transport mechanism in composite films spans from Ohmic to space charge limited conduction depending upon applied bias. The numerical modeling reveals a marked enhancement of the hole mobility in polymer-MoS2 (PG-MoS2) films. We discuss the possible mechanisms behind the improved carrier mobility in the films of PG-MoS2 nanosheets. Our work establishes the incorporation of 2D semiconducting nanosheets as a viable approach for improving carrier transport in films of organic semiconductors. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1361-6463/ab83c5Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. D, Applied Physics
- Journal Volume
- 53
- Journal Issue
- 27
- Journal Page Range
- [7 p.]
- ISSN
- 0022-3727
- CODEN
- JPAPBE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52055288
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- CARRIER MOBILITY; CHARGE TRANSPORT; COMPUTERIZED SIMULATION; HOLE MOBILITY; MOLYBDENUM SULFIDES; NANOSTRUCTURES; ORGANIC SEMICONDUCTORS; POLYMERS; SPACE CHARGE; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE; THIN FILMS; TWO-DIMENSIONAL SYSTEMS
- Descriptors DEC
- CHALCOGENIDES; CRYSTAL LATTICES; CRYSTAL STRUCTURE; FILMS; MATERIALS; MOBILITY; MOLYBDENUM COMPOUNDS; REFRACTORY METAL COMPOUNDS; SEMICONDUCTOR MATERIALS; SIMULATION; SULFIDES; SULFUR COMPOUNDS; TRANSITION ELEMENT COMPOUNDS