Published September 15, 1984 | Version v1
Journal article Metadata-only

Development of high density readout for silicon strip detectors

Creators

  • 1. Stanford Univ., CA (USA)
  • 2. Hawaii Univ., Honolulu (USA)
  • 3. European Organization for Nuclear Research, Geneva (Switzerland)
  • 4. Stanford Linear Accelerator Center, CA (USA)

Description

A compact readout for silicon strip detectors is being developed. It employs an nMOS circuit with 128 channels of charge sensitive amplifiers and multiplexed output. (orig.)

Additional details

Publishing Information

Journal Title
Nucl. Instrum. Methods Phys. Res., Sect. A
Journal Volume
226
Journal Issue
1
Series
CODEN: NIMRD.;Nucl. Instrum. Methods Phys. Res., Sect. A.
Journal Page Range
200-203
ISSN
0167-5087

Conference

Title
New developments in silicon detectors.
Acronym
2. European symposium on semiconductor detectors
Dates
14-16 Nov 1983.
Place
Muenchen (Germany, F.R.).

INIS

Country of Publication
Netherlands
Country of Input or Organization
Netherlands
INIS RN
16015061
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
COUNTING CIRCUITS; INTEGRATED CIRCUITS; MOS TRANSISTORS; MULTIPLEXERS; POSITION SENSITIVE DETECTORS; PULSE AMPLIFIERS; READOUT SYSTEMS; SI SEMICONDUCTOR DETECTORS
Descriptors DEC
AMPLIFIERS; ELECTRONIC CIRCUITS; ELECTRONIC EQUIPMENT; EQUIPMENT; MEASURING INSTRUMENTS; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR DEVICES; TRANSISTORS