Published 1987
| Version v1
Book
Photo-induced degradation and stability in semiconductor devices
Creators
- 1. Massachusetts Institute of Technology, Cambridge
Description
A new theory for the structure and electronic properties of disordered systems is briefly reviewed, particularly with regard to its application to amorphous silicon alloys. They then consider the case of nonequilibrium free-carrier concentrations. A model for the observed photo-induced effects in amorphous silicon alloys is proposed. The model is consistent with a wide array of experimental data and suggested several techniques for the control and elimination of photogenerated defect formation in amorphous semiconductors
Additional details
Publishing Information
- Publisher
- American Institute of Physics.
- Imprint Place
- New York, NY (USA)
- Imprint Title
- Stability of amorphous silicon alloy materials and devices
- Journal Page Range
- p. 185-192.
Conference
- Title
- International conference on stability of amorphous silicon alloy materials and devices.
- Dates
- 28-30 Jan 1987.
- Place
- Palo Alto, CA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 19021815
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE; S42: ENGINEERING;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- AMORPHOUS STATE; CRYSTAL DEFECTS; DOPED MATERIALS; ELECTRICAL PROPERTIES; HYDROGENATION; MATHEMATICAL MODELS; MICROSTRUCTURE; OPTICAL PROPERTIES; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SILICON; THEORETICAL DATA; VISIBLE RADIATION
- Descriptors DEC
- CHEMICAL REACTIONS; CRYSTAL STRUCTURE; DATA; ELECTROMAGNETIC RADIATION; ELEMENTS; INFORMATION; MATERIALS; NUMERICAL DATA; PHYSICAL PROPERTIES; RADIATION EFFECTS; RADIATIONS; SEMIMETALS