Development of multi-layered CdTe semiconductor detectors

A multi-layered structure of CdTe elements has been proposed in order to improve the sensitivity in the high energy regions. The response of a semiconductor detector whose charge carriers mobility is as small as CdTe could be simulated and the degree of sensitivity improvement in the high energy regions could be predicted. Both the experimental result and the simulated result indicates that the full energy peak efficiency in the high energy regions can become high and the energy spectra can be improved by means of the multi-layered structure of detector elements. (author)