High-performance room-temperature extended-wavelength InAs-based middle-wavelength infrared photodetector

Herein, a high-performance room-temperature extended-wavelength InAs-based barrier-type photodetector that operates in the 1.5-3.5 µm wavelength range is presented. The experimental results show that the uncooled photodetector exhibits a peak responsivity of 1.47 A W${}^{-1}$ at 3 µm and a peak detectivity as high as 1.6 × 10${}^{10}$ cm Hz${}^{1/2}$ W${}^{-1}$ at zero bias, which is 3-10 times higher than that of available commercial InAs photodetectors. The external quantum efficiency at the peak responsivity is ≈ 63%. The nature of the detector's extended spectral response is investigated using numerical computation analyses, which indicate that such improvement is primarily contributed by the InAsSbP window layer. (© 2021 Wiley‐VCH GmbH)