Published 1994
| Version v1
Book
Numerical simulation of hard errors induced by heavy ions in 4T high density SRAM cells
Description
2D Numerical Simulation of local dose deposition effects in N Channel MOS transistors are presented in order to explain experimental observation of stuck bits in 4 T resistor loaded cells of high density SRAMs irradiated by heavy ions. The ion impact location in the channel is shown to strongly modulate the observed threshold voltage shift. This shift variation versus the inverse channel length is super linear, so more important effects are expected for 4T cells as transistor dimensions will be reduced. (author). 12 refs., 5 figs., 4 tabs
Additional details
Additional titles
- Augmented title (English)
- 4T: 4 transistors
Publishing Information
- Publisher
- Commissariat a l'Energie Atomique.
- Imprint Place
- Bruyeres-le-Chatel (France)
- Imprint Title
- Radiation and its effects on components and systems
- Imprint Pagination
- 596 p.
- Journal Page Range
- p. 473-478.
Conference
- Title
- 2. European Conference on Radiation and its Effects on Components and Systems.
- Dates
- 13-16 Sep 1993.
- Place
- Saint-Malo (France).
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 27008819
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- COMPUTERIZED SIMULATION; DEPLETION LAYER; ERRORS; HEAVY IONS; INTEGRATED CIRCUITS; LEAKAGE CURRENT; LET; MOS TRANSISTORS; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR STORAGE DEVICES; SILICON OXIDES; TRAPPED ELECTRONS; TWO-DIMENSIONAL CALCULATIONS
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; CURRENTS; ELECTRIC CURRENTS; ELECTRONIC CIRCUITS; ELECTRONS; ELEMENTARY PARTICLES; ENERGY TRANSFER; FERMIONS; IONS; LEPTONS; MEMORY DEVICES; OXIDES; OXYGEN COMPOUNDS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SILICON COMPOUNDS; SIMULATION; TRANSISTORS