Published August 2001
| Version v1
Journal article
Near-infrared light emission from single crystal silicon dually implanted with erbium and silicon
- 1. Beijing Normal Univ., Beijing (China). Inst. of Low Energy Nuclear Physics
- 2. Fudan Univ., Shanghai (China). Surface Physics Laboratory
- 3. Nanchang Univ., Nanchang (China). Dept. of Materials Science and Engineering
Description
Erbium and silicon dual implantation into silicon is performed on MEVVA ion source implanter. After rapid thermal annealing, 1.54 μm photoluminescence is observed at 77 K. Er ions are mainly distributed near the surface of the samples, and Er atomic concentration exceeds 1021 cm-3. Needle neanometer crystalline silicon (nc-Si) is formed on the surface of silicon. The mechanism of Er3+ luminescence is investigated
Additional details
Publishing Information
- Journal Title
- Journal of Beijing Normal University. Natural Science
- Journal Volume
- 37
- Journal Issue
- 4
- Journal Page Range
- p. 476-481
- ISSN
- 0476-0301
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 34043778
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ERBIUM IONS; ION IMPLANTATION; ION SOURCES; MONOCRYSTALS; PHOTOLUMINESCENCE; SILICON; SILICON IONS; SURFACES
- Descriptors DEC
- CHARGED PARTICLES; CRYSTALS; ELEMENTS; EMISSION; IONS; LUMINESCENCE; PHOTON EMISSION; SEMIMETALS