Published April 2009
| Version v1
Journal article
Design procedure for optimizing CMOS low noise operational amplifiers
Creators
- 1. Microelectronics Center, Harbin Institute of Technology, Harbin 150001 (China)
Description
This paper presents and experimentally verifies an optimized design procedure for a CMOS low noise operational amplifier. The design procedure focuses on the noise performance, which is the key requirement for low noise operational amplifiers. Based on the noise level and other specifications such as bandwidth, signal swing, slew rate, and power consumption, the device sizes and the biasing conditions are derived. In order to verify the proposed design procedure, a three-stage operational amplifier has been designed. The device parameters obtained from the proposed design procedure closely agree with the simulated results obtained by using HSPICE.
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-4926/30/4/045005Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Semiconductors
- Journal Volume
- 30
- Journal Issue
- 4
- Journal Page Range
- [5 p.]
- ISSN
- 1674-4926
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41079215
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- DESIGN; NOISE; OPERATIONAL AMPLIFIERS; OPTIMIZATION; PERFORMANCE; SEMICONDUCTOR MATERIALS; SIGNALS; SILICON OXIDES; SIMULATION; SPECIFICATIONS
- Descriptors DEC
- AMPLIFIERS; CHALCOGENIDES; ELECTRONIC EQUIPMENT; EQUIPMENT; MATERIALS; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS