Published June 1998 | Version v1
Journal article

A new singularity in the coherent coupling in Al/GaAs/Al SNS junctions at the bias voltage corresponding to the superconducting energy gap

  • 1. Technical Univ. of Denmark, Lyngby (Denmark). Dept. of Physics
  • 2. Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen Oe (Denmark)
  • 3. Department of Physics, Chalmers University of Technology, S-41296 Gothenburg (Sweden)

Description

Particularly high transmittivity superconductor-semiconductor barriers formed by MBE growth have been used to form short Josephson planar type Superconductor-Normal-metal-Superconduc tor (SNS) Josephson junctions with lengths down to 1 μm. In these junctions the quasiparticles move diffusively across the normal region and carry along the phase information given to them by Andreev reflections at both SN boundaries. In order to probe the importance of the coherent transport of quasiparticles in the normal region, we formed one of the superconducting electrodes of the junction as an open loop i.e. an SNS1S2 junction. The total transmission probability through this junction which is modulated by the external magnetic flux through the loop, depends on the coherence of the trajectories going across from S to S1 and from S to S2. Oscillations of the conductance in this type of sample versus magnetic field was observed both at VDC=0 and VDC=Δ/e=163 μV. At intermediate as well as higher voltages no oscillations were observed. (orig.)

Additional details

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
249-251
Journal Page Range
p. 480-484
ISSN
0921-4526
CODEN
PHYBE3

Conference

Title
12. international conference on electronic properties of two-dimensional systems (EP2DS-12)
Dates
22-26 Sep 1997
Place
Tokyo (Japan)

INIS

Country of Publication
Netherlands
Country of Input or Organization
Netherlands
INIS RN
29059708
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALUMINIUM; ELECTRON GAS; FERMI LEVEL; GALLIUM ARSENIDES; JOSEPHSON EFFECT; MAGNETORESISTANCE; OSCILLATIONS; QUASI PARTICLES; SEMICONDUCTOR MATERIALS; SUPERCONDUCTING FILMS; THIN FILMS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; ENERGY LEVELS; FILMS; GALLIUM COMPOUNDS; MATERIALS; METALS; PHYSICAL PROPERTIES; PNICTIDES

Optional Information

Notes
10 refs.