Published February 2002
| Version v1
Journal article
Junction area dependence of tunneling magnetoresistance
Description
Spin dependent tunneling devices Ta/NiFe/Ta/NiFe/FeMn/NiFe/CoFe/Al2O3/CoFe/NiFe/Al with in-situ naturally oxidized Al2O3 barrier were fabricated using ion beam deposition and DC sputtering. The as-deposited and post-annealing junctions showed tunneling magnetoresistance of 8-18% with resistance-area products (RxA) of 340-60 Ω μm2, which were dependent on the junction area (81-4 μm2)
Additional details
Identifiers
- PII
- S030488530100590X;
Publishing Information
- Journal Title
- Journal of Magnetism and Magnetic Materials
- Journal Volume
- 239
- Journal Issue
- 1-3
- Journal Page Range
- p. 129-131
- ISSN
- 0304-8853
- CODEN
- JMMMDC
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 34003142
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM; ALUMINIUM OXIDES; ANNEALING; COBALT COMPOUNDS; ION BEAMS; IRON COMPOUNDS; MAGNETORESISTANCE; MANGANESE COMPOUNDS; NICKEL COMPOUNDS; OXIDATION; SPIN; SPUTTERING; SUPERCONDUCTING JUNCTIONS; SUPERCONDUCTIVITY; TANTALUM; TUNNEL EFFECT
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ANGULAR MOMENTUM; BEAMS; CHALCOGENIDES; CHEMICAL REACTIONS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; HEAT TREATMENTS; METALS; OXIDES; OXYGEN COMPOUNDS; PARTICLE PROPERTIES; PHYSICAL PROPERTIES; REFRACTORY METALS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2002 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.