Published December 2004 | Version v1
Journal article

MOCVD growth of transparent conducting Cd2SnO4 thin films

  • 1. Department of Chemistry, Northwestern University, Evanston, IL 60208-3113 (United States)
  • 2. Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208-3113 (United States)

Description

The first preparation of transparent conducting Cd2SnO4 thin films by a simple MOCVD process is described. As-deposited films using Cd(hfa)2(TMEDA) (Figure), at 365 C are found to be highly crystalline with a relatively wide range of grain size of 100-300 nm. XRD indicates a cubic spinel Cd2SnO4 crystal structure and the possible presence of a small amount of CdO. The films exhibit conductivities of 2170 S/cm and a bandgap of 3.3 eV, rivaling those of commercial tin-doped indium oxide. (Abstract Copyright [2004], Wiley Periodicals, Inc.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/cvde.200304177

Additional details

Identifiers

Publishing Information

Journal Title
Chemical Vapor Deposition
Journal Volume
10
Journal Issue
6
Journal Page Range
p. 297-300
ISSN
0948-1907
CODEN
CVDEFX

Optional Information

Notes
With 4 figs., 1 tab., 35 refs.. SICI: 0948-1907(200412)10:6<297::AID-CVDE200304177>3.0.TX;2-L