Published 2007
| Version v1
Book
Negative magneto-resistance of n-type silicon on localized spins
Creators
- 1. Aktauskij Gosudarstvennyj Univ. im. Sh. Esenova, Aktau (Kazakhstan)
Description
The work is devoted to negative magneto-resistance of n-type silicon reasoned by electrons' spins localization of impurity atoms in magnetic field
Additional details
Additional titles
- Original title (Russian)
- Отрицательное магнитосопротивление кремния н-типа на локализованных спинах
Publishing Information
- Publisher
- Inst. Yadernoj Fiziki NYaTs RK
- Imprint Place
- Almaty (Kazakhstan)
- ISBN
- 9965-675-37-6
- Imprint Title
- Abstracts of 6. International conference 'Nuclear and Radiation Physics'
- Imprint Pagination
- 726 p.
- Journal Page Range
- p. 365-366
Conference
- Title
- 6. International conference on Nuclear and Radiation Physics
- Original Conference Title
- 6. Mezhdunarodnaya konferentsiya 'Yadernaya i Radiatsionnaya Fizika'
- Dates
- 4-7 Jun 2007
- Place
- Almaty (Kazakhstan)
INIS
- Country of Publication
- Kazakhstan
- Country of Input or Organization
- Kazakhstan
- INIS RN
- 39041280
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ELECTRIC CONDUCTIVITY; ELECTRONS; IMPURITIES; MAGNETIC FIELDS; MAGNETIC PROPERTIES; N-TYPE CONDUCTORS; SILICON; SPIN
- Descriptors DEC
- ANGULAR MOMENTUM; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; LEPTONS; MATERIALS; PARTICLE PROPERTIES; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS; SEMIMETALS
Optional Information
- Notes
- 2 refs., 1 fig.