Published October 2012 | Version v1
Journal article Metadata-only

Multilevel resistance switching of Ag/Nb-doped SrTiO3/Ti structure

Creators

  • 1. Zhejiang Sci-Tech University, Nanometer Measurement Lab, Hangzhou (China)
  • 2. Zhejiang Sci-Tech University, Department of Physics, Center for Optoelectronics Materials and Devices, Hangzhou (China)
  • 3. University of Sheffield, Department of Materials Science and Engineering, Sheffield (United Kingdom)
  • 4. Beijing University Posts and Telecommunications, School of Science, Beijing (China)
  • 5. Beijing University Posts and Telecommunications, State Key Laboratory of Information Photonics and Optical Communication, Beijing (China)

Description

Ag/0.7 wt% Nb-doped SrTiO3 (Nb:STO)/Ti structure was prepared by sputtering Ag and Ti electrodes on a Nb:STO single crystal substrate and the resistance switching (RS) properties were investigated. Reversible multilevel resistance switching behavior was obtained by applying different voltages. The resistance switching (RS) effect comes from the Schottky barrier existed between Ag and Nb:STO interface. The multilevel switching mechanism may be related to the different number of electrons trapped or detrapped by oxygen vacancies (Vo2+) at the Ag/Nb:STO interface, which can change the width of depletion layer. The temperature dependence on resistance of Ag/Nb:STO/Ti suggests that both high resistance state (HRS) and low resistance state (LRS) are of semiconductor behavior. Substrate annealing in vacuum degrades the RS properties of Ag/Nb:STO/Ti structure due to the increase of Vo2+ in Nb:STO. (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1007/s00339-012-7036-x

Additional details

Identifiers

DOI
10.1007/s00339-012-7036-x;

Publishing Information

Journal Title
Applied Physics. A, Materials Science and Processing
Journal Volume
109
Journal Issue
1
Journal Page Range
p. 219-222
ISSN
0947-8396
CODEN
APAMFC

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
44000110
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANNEALING; COMPOSITE MATERIALS; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; INTERFACES; MONOCRYSTALS; NIOBIUM ADDITIONS; SEMICONDUCTOR MATERIALS; SILVER ADDITIONS; STRONTIUM TITANATES; TEMPERATURE DEPENDENCE; TITANIUM; VACANCIES
Descriptors DEC
ALKALINE EARTH METAL COMPOUNDS; ALLOYS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; ELECTRICAL PROPERTIES; ELEMENTS; HEAT TREATMENTS; MATERIALS; METALS; NIOBIUM ALLOYS; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; POINT DEFECTS; SILVER ALLOYS; STRONTIUM COMPOUNDS; TITANATES; TITANIUM COMPOUNDS; TRANSITION ELEMENT ALLOYS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS