Published November 21, 2014
| Version v1
Journal article
Recent results of the 3D-stripixel Si detectors
- 1. School of Materials, Optoelectronics and Physics, Xiangtan University, Xiangtan, Hunan 411105 (China)
- 2. Centro Nacional de Microelectrónica IMB-CNM-CSIC, Campus Universidad Autónoma de Barcelona, 08193 Bellaterra, Barcelona (Spain)
- 3. Brookhaven National Laboratory, Upton, NY 11973 (United States)
Description
The design, fabrication process and the characteristics measurements of the new 3D-stripixel detectors are presented in this paper. The optimized detectors design is simulated and analyzed with Sentaurus TCAD toolkit. The active area of the detector was studied with the laser transient current techniques (TCT) measurement. The characteristics of detector's 2D position sensitivity and charge collection was studied with an Alibava DAQ system
Availability note (English)
Available from http://dx.doi.org/10.1016/j.nima.2014.05.088Additional details
Identifiers
- DOI
- 10.1016/j.nima.2014.05.088;
- PII
- S0168-9002(14)00641-X;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 765
- Journal Page Range
- p. 103-108
- ISSN
- 0168-9002
- CODEN
- NIMAER
Conference
- Title
- 9. international ''Hiroshima'' symposium on development and application of semiconductor tracking detectors
- Acronym
- HSTD-9 2013
- Dates
- 1-5 Sep 2013
- Place
- Hiroshima (Japan)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46125242
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHARGE COLLECTION; CURRENTS; DESIGN; FABRICATION; LASERS; SENSITIVITY; SI SEMICONDUCTOR DETECTORS; SIMULATION; TRANSIENTS
- Descriptors DEC
- MEASURING INSTRUMENTS; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS
Optional Information
- Copyright
- Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.