Published February 21, 2014
| Version v1
Journal article
Formation and annealing of boron-oxygen defects in irradiated silicon and silicon-germanium n+–p structures
Creators
- 1. Belarusian State University, Minsk (Belarus)
- 2. Scientific-Practical Materials Research Centre of NAS of Belarus (Belarus)
- 3. CERN, Geneva (Switzerland)
- 4. National Institute of Materials Physics, Magurele (Romania)
- 5. Leibniz Institute for Crystal Growth, Berlin (Germany)
Description
New findings on the formation and annealing of interstitial boron-interstitial oxygen complex (BiOi) in p-type silicon are presented. Different types of n+−p structures irradiated with electrons and alpha-particles have been used for DLTS and MCTS studies. Electronic excitation essentially changes the formation rate of BiOi. It has been found that the increase of oxygen content slows the BiOi annealing rate down. The activation energy of the BiOi dissociation has been determined and it was found that germanium doping does not change the activation energy
Additional details
Identifiers
- DOI
- 10.1063/1.4865618;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 1583
- Journal Issue
- 1
- Journal Page Range
- p. 123-126
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- 27. international conference on defects in semiconductors
- Acronym
- ICDS-2013
- Dates
- 21-26 Jul 2013
- Place
- Bologna (Italy)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45084904
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ACTIVATION ENERGY; ALPHA PARTICLES; ANNEALING; BORON; ELECTRONS; GERMANIUM; IRRADIATION; NITROGEN IONS; OXYGEN; OXYGEN COMPLEXES; SILICON
- Descriptors DEC
- CHARGED PARTICLES; COMPLEXES; ELEMENTARY PARTICLES; ELEMENTS; ENERGY; FERMIONS; HEAT TREATMENTS; IONIZING RADIATIONS; IONS; LEPTONS; METALS; NONMETALS; RADIATIONS; SEMIMETALS
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC