Published February 1990
| Version v1
Journal article
Thermal processes in gallium arsenide during nanosecond laser irradiation
Description
Phase changes in the surface layers of semiconductors during irradiation by nanosecond laser pulses have been the subject of large numbers of papers. The authors have performed numerical modeling and an experimental study of phase changes in the surface layers of single crystal gallium arsenide heated by single pulses of ruby laser light
Additional details
Publishing Information
- Journal Title
- Soviet Physics - Technical Physics (English Translation)
- Journal Volume
- 35
- Journal Issue
- 2
- Series
- Sov. Phys. - Tech. Phys. (Engl. Transl.).
- Journal Page Range
- 258-260
- ISSN
- 0038-5662
- CODEN
- SPTPA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 22042771
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Numerical Data, Translation
- Descriptors DEI
- EXPERIMENTAL DATA; GALLIUM ARSENIDES; LASER RADIATION; MEASURING METHODS; MONOCRYSTALS; NUMERICAL SOLUTION; PHASE TRANSFORMATIONS; RUBY LASERS
- Descriptors DEC
- AMPLIFIERS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTALS; DATA; ELECTROMAGNETIC RADIATION; EQUIPMENT; GALLIUM COMPOUNDS; INFORMATION; LASERS; NUMERICAL DATA; PNICTIDES; RADIATIONS; SOLID STATE LASERS
Optional Information
- Notes
- (English). Cover-to-cover Translation of Zhurnal Tekhnicheskoj Fiziki (USSR). Cover-to-cover translation of Zhurnal Tekhnicheskoj Fiziki (USSR).