Published 2018
| Version v1
Journal article
Developing the process for through-etching of single-crystal quartz in inductively coupled plasmas
Creators
- 1. Peter the Great St. Petersburg Polytechnic University, Department of Chemistry and Microsystem Technologies, St. Petersburg (Russian Federation)
Description
The possibility of using the Taguchi method to create an optimized process for deep-through plasmachemical etching of single-crystal quartz with a minimum number of experiments is considered. The technological parameters of the PCE process in CH4/H2 and SF6/O2 plasmas have been ranked according to the degree of significance of their influence on the etching rate. The influence nature of these parameters on the etching rate is analyzed. Keywords: dry etching, quartz, CF4+H2 plasma, SF6+O2 plasma, inductively coupled plasma, etching rate
Availability note (English)
Available https://www.scientific-publications.netAdditional details
Identifiers
Publishing Information
- Journal Title
- Journal of International Scientific Publications: Materials, Methods and Technologies (Online)
- Journal Volume
- 12
- Journal Page Range
- p. 286-294
- ISSN
- 1314-7269
INIS
- Country of Publication
- Bulgaria
- Country of Input or Organization
- Bulgaria
- INIS RN
- 49089757
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ETCHING; HYDROGEN; METHANE; MONOCRYSTALS; PLASMA; QUARTZ; SULFUR FLUORIDES
- Descriptors DEC
- ALKANES; CRYSTALS; ELEMENTS; FLUORIDES; FLUORINE COMPOUNDS; HALIDES; HALOGEN COMPOUNDS; HYDROCARBONS; MINERALS; NONMETALS; ORGANIC COMPOUNDS; OXIDE MINERALS; SULFUR COMPOUNDS; SULFUR HALIDES; SURFACE FINISHING