Published June 2006
| Version v1
Journal article
Molecular dynamic simulation of ion induced sputtering of copper nanodimensional surface clusters from copper single crystal
Creators
- 1. Zaporozhskij Natsional'nyj Tekhnicheskij Univ., Zaporozh'e (Ukraine)
- 2. Inst. Obshchej Fiziki Tekhnicheskogo Univ. Veny, Vena (Austria)
Description
Molecular dynamics simulation of 200 eV argon ion sputtering of copper clusters, which consist of 13 and 39 atoms, from (100) surface single crystal of copper have been performed. Sputtering yields and angular and energy distributions of sputtered copper atoms have been obtained, substrate influence on sputtering process is discussed
Abstract (Russian)
Выполнено молекулярно-динамическое моделирование распыления одиночных кластеров меди, состоящих из 13 и 39 атомов, с поверхности грани (100) медной монокристаллической подложки ионами аргона с энергией 200 эВ. Получены значения коэффициентов распыления и угловые распределения в потоке атомов меди. Обсуждается влияние подложки на процесс распыленияAdditional details
Additional titles
- Original title (Russian)
- Молекулярно-динамическое моделирование ионного распыления наноразмерных кластеров меди с поверхности медной монокристаллической подложки
- Augmented title (English)
- nanoclusters
Publishing Information
- Journal Title
- Poverkhnost'. Rentgenovskie, Sinkhrotronnye i Nejtronnye Issledovaniya
- Journal Issue
- no.6
- Journal Page Range
- p. 93-95
- ISSN
- 1028-0960
Conference
- Title
- 4. Workshop on investigation by pulse reactor of IBR-2
- Original Conference Title
- IV Rabochee soveshchanie po issledovaniyam na impul'snom reaktore IBR-2
- Dates
- 16-18 Jun 2005
- Place
- Dubna (Russian Federation)
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 39021282
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANGULAR DISTRIBUTION; ARGON IONS; ATOMS; COMPUTERIZED SIMULATION; COPPER; EV RANGE 100-1000; ION BEAMS; MOLECULAR DYNAMICS METHOD; MONOCRYSTALS; NANOSTRUCTURES; SOLID CLUSTERS; SPUTTERING; SUBSTRATES
- Descriptors DEC
- BEAMS; CALCULATION METHODS; CHARGED PARTICLES; CRYSTALS; DISTRIBUTION; ELEMENTS; ENERGY RANGE; EV RANGE; IONS; METALS; SIMULATION; TRANSITION ELEMENTS
Optional Information
- Notes
- 11 refs., 2 figs.