Quantum memory and all-optical switching in positive charged quantum dots via Zeeman coherent oscillations
Creators
- 1. Escuela Universitaria de Óptica, Universidad Complutense de Madrid, C/ Arcos de Jalón s/n, 28037 Madrid (Spain)
Description
Linear and nonlinear properties in an ensemble of single-hole spin InGaAs/GaAs quantum dots are theoretically studied. The application of a DC magnetic field in the semiconductor growth plane induces a Zeeman splitting of the hole levels which can be modeled like a four-level atom in the X-type configuration. All-optical and magneto-optical switching of a weak probe field are shown to be feasible in this system either by changing the Rabi frequency of an auxiliary control field or by changing the magnitude of the external magnetic field. We analyze the feasibility to store and release a weak pulse from the medium resulting from Zeeman coherent oscillations, thus the system is expected to be useful to develop a variable semiconductor optical buffer
Availability note (English)
Available from http://dx.doi.org/10.1088/2040-8978/12/10/104006Additional details
Identifiers
- DOI
- 10.1088/2040-8978/12/10/104006;
- PII
- S2040-8978(10)48453-0;
Publishing Information
- Journal Title
- Journal of Optics (Online)
- Journal Volume
- 12
- Journal Issue
- 10
- Journal Page Range
- [13 p.]
- ISSN
- 2040-8986
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45019102
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- GALLIUM ARSENIDES; HOLES; INDIUM ARSENIDES; MAGNETIC FIELDS; NONLINEAR PROBLEMS; OSCILLATIONS; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; SPIN; ZEEMAN EFFECT
- Descriptors DEC
- ANGULAR MOMENTUM; ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; NANOSTRUCTURES; PARTICLE PROPERTIES; PNICTIDES