Published November 3, 2008 | Version v1
Journal article Metadata-only

Misfit dislocation generation in SiGe epitaxial layers supersaturated with intrinsic point defects

Creators

  • 1. Institute for Chemical Problems of Microelectronics, B. Tolmachevsky per. 5, 119017 Moscow (Russian Federation)
  • 2. Max-Planck-Institut fuer Mikrostrukturphysik, 06120 Halle (Saale) (Germany)

Description

Misfit dislocation generation in SiGe/Si(001) heterostructures supersaturated with the vacancies (LT epitaxial growth) or self-interstitials (ion implantation) was studied by transmission electron microscopy. A model of 'optimal' intrinsic point defects (IPDs) for effective strain relaxation is suggested and verified. Supersaturation of compressed SiGe layers with the vacancies ('optimal' IPDs) promotes high strain relaxation, whereas supersaturation with the self-interstitials ('inverse' IPDs) promotes a generation of V-shaped TDs which cannot extend to form MDs

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2008.08.022

Additional details

Identifiers

DOI
10.1016/j.tsf.2008.08.022;
PII
S0040-6090(08)00840-7;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
517
Journal Issue
1
Journal Page Range
p. 278-280
ISSN
0040-6090
CODEN
THSFAP

Conference

Title
5. International conference on silicon epitaxy and heterostructures
Acronym
ICSI-5
Dates
20-24 May 2007
Place
Marseille (France)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
40059009
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
DISLOCATIONS; EPITAXY; GERMANIUM SILICIDES; INTERSTITIALS; ION IMPLANTATION; LAYERS; STRAINS; SUPERSATURATION; TRANSMISSION ELECTRON MICROSCOPY; VACANCIES
Descriptors DEC
CRYSTAL DEFECTS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; ELECTRON MICROSCOPY; GERMANIUM COMPOUNDS; LINE DEFECTS; MICROSCOPY; POINT DEFECTS; SATURATION; SILICIDES; SILICON COMPOUNDS

Optional Information

Copyright
Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.