Published December 2014 | Version v1
Journal article

Thermally stimulated 3–15 THz emission at plasmon-phonon frequencies in polar semiconductors

  • 1. Center for Physical Sciences and Technology, Semiconductor Physics Institute (Lithuania)

Description

The possibilities of distinguishing highly coherent terahertz emission at a specified frequency from the incoherent thermal emission of a hot body are considered. It is experimentally shown that the smooth planar surface (with no diffraction guides) of heated GaAs and AlGaAs wafers emits directed continuous-wave (cw) terahertz radiation at coupled surface plasmon-phonon vibrational frequencies. The recording of terahertz reflectance spectra is demonstrated as a method for the identification of plasmons, optical phonons, and coupled plasmon-phonon vibrations in semiconductors

Additional details

Identifiers

Publishing Information

Journal Title
Semiconductors
Journal Volume
48
Journal Issue
12
Journal Page Range
p. 1557-1561
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46006585
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
DIFFRACTION; EMISSION; GALLIUM ARSENIDES; PHONONS; PLASMONS; SEMICONDUCTOR MATERIALS; SPECTRA; SURFACES
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; GALLIUM COMPOUNDS; MATERIALS; PNICTIDES; QUASI PARTICLES; SCATTERING

Optional Information

Copyright
Copyright (c) 2014 Pleiades Publishing, Ltd.