Published December 2014
| Version v1
Journal article
Thermally stimulated 3–15 THz emission at plasmon-phonon frequencies in polar semiconductors
Creators
- 1. Center for Physical Sciences and Technology, Semiconductor Physics Institute (Lithuania)
Description
The possibilities of distinguishing highly coherent terahertz emission at a specified frequency from the incoherent thermal emission of a hot body are considered. It is experimentally shown that the smooth planar surface (with no diffraction guides) of heated GaAs and AlGaAs wafers emits directed continuous-wave (cw) terahertz radiation at coupled surface plasmon-phonon vibrational frequencies. The recording of terahertz reflectance spectra is demonstrated as a method for the identification of plasmons, optical phonons, and coupled plasmon-phonon vibrations in semiconductors
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 48
- Journal Issue
- 12
- Journal Page Range
- p. 1557-1561
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46006585
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- DIFFRACTION; EMISSION; GALLIUM ARSENIDES; PHONONS; PLASMONS; SEMICONDUCTOR MATERIALS; SPECTRA; SURFACES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; GALLIUM COMPOUNDS; MATERIALS; PNICTIDES; QUASI PARTICLES; SCATTERING
Optional Information
- Copyright
- Copyright (c) 2014 Pleiades Publishing, Ltd.