Published September 1, 1984 | Version v1
Journal article

Search for electron-electron scattering in Tantalum

  • 1. Department of Physics, Illinois Institute of Technology, Chicago, Illinois

Description

Electrical resistivity measurements between 2.56 and 300 K were made on two high-purity specimens of tantalum with residual resistance ratios of 1186 and 1333. The data obtained were analyzed with various epressions used by earlier investigators. Although good fits were found for an expression including terms for electron-impurity, electron-electron, and electron-phonon interban and intraband scattering, the domination of the electron-impurity term at the lowest temperatures made it impossible to determine unambiguously whether a T2 term due to electron-electron scattering was indeed present

Additional details

Publishing Information

Journal Title
J. Low Temp. Phys.
Journal Volume
56
Journal Issue
5
Series
J. Low Temp. Phys.
Journal Page Range
523-530
ISSN
0022-2291