Published September 1, 1984
| Version v1
Journal article
Search for electron-electron scattering in Tantalum
- 1. Department of Physics, Illinois Institute of Technology, Chicago, Illinois
Description
Electrical resistivity measurements between 2.56 and 300 K were made on two high-purity specimens of tantalum with residual resistance ratios of 1186 and 1333. The data obtained were analyzed with various epressions used by earlier investigators. Although good fits were found for an expression including terms for electron-impurity, electron-electron, and electron-phonon interban and intraband scattering, the domination of the electron-impurity term at the lowest temperatures made it impossible to determine unambiguously whether a T2 term due to electron-electron scattering was indeed present
Additional details
Publishing Information
- Journal Title
- J. Low Temp. Phys.
- Journal Volume
- 56
- Journal Issue
- 5
- Series
- J. Low Temp. Phys.
- Journal Page Range
- 523-530
- ISSN
- 0022-2291
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 16057309
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- ELECTRIC CONDUCTIVITY; ELECTRON-ELECTRON COLLISIONS; EXPERIMENTAL DATA; LOW TEMPERATURE; MAGNETIC FIELDS; MEDIUM VACUUM; MONOCRYSTALS; SUPERCONDUCTING MAGNETS; TANTALUM; ULTRALOW TEMPERATURE; VERY LOW TEMPERATURE
- Descriptors DEC
- COLLISIONS; CRYSTALS; DATA; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELECTROMAGNETS; ELECTRON COLLISIONS; ELEMENTS; EQUIPMENT; INFORMATION; MAGNETS; METALS; NUMERICAL DATA; PHYSICAL PROPERTIES; SUPERCONDUCTING DEVICES; TRANSITION ELEMENTS