Published 2000 | Version v1
Miscellaneous Metadata-only

Transport properties of InAs/GaAs layers manufacturing by means of molecular beam epitaxy method

Creators

  • 1. Instytut Technologii Elektronowej, Warsaw (Poland)

Description

no abstract available

Part of:
Abstracts book of 7. Scientific Conference 'Electronic Technology' ELTE 2000

Additional details

Additional titles

Original title (Polish)
Wlasnosci transportowe warstw InAS/GaAs wytwarzanych metoda epitaxji z wiazek molekularnych

Publishing Information

Imprint Title
Abstracts book of 7. Scientific Conference 'Electronic Technology' ELTE 2000
Imprint Pagination
[RP 1-9; RS 1; ME 1-78; MN 1-58; F 1-73; TP 1-48; MG 1-16; MS 1-51]
Journal Page Range
p. ME, 42

Conference

Title
7. Scientific Conference 'Electronic Technology' ELTE 2000
Original Conference Title
7. Konferencja Naukowa 'Technologia Elektronowa' ELTE 2000
Dates
18-22 Sep 2000
Place
Polanica-Zdroj (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
32031642
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
CHARGE CARRIERS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; GALLIUM ARSENIDES; HALL EFFECT; HETEROJUNCTIONS; INDIUM ARSENIDES; MAGNETIC FIELDS; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; SUBSTRATES; TEMPERATURE DEPENDENCE
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR JUNCTIONS

Optional Information

Contract/Grant/Project number
KBN grant no. 8 T11B 048 17
Notes
Imprint:Zbior streszczen 7. Konferencja Naukowa 'Technologia Elektronowa' ELTE 2000