Published 1998
| Version v1
Miscellaneous
High resistivity AlGaAs grown by low temperature MBE
- 1. Institute of Electron Technology, Warsaw (Poland)
Description
no abstract available
Additional details
Additional titles
- Augmented title (English)
- thin films
Publishing Information
- Imprint Title
- Abstracts of 27. International School on Physics of Semiconducting Compounds Jaszowiec '98
- Imprint Pagination
- 175 p.
- Journal Page Range
- p. 91
Conference
- Title
- 27. International School on Physics of Semiconducting Compounds Jaszowiec '98
- Dates
- 7-12 Jun 1998
- Place
- Ustron-Jaszowiec (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 31013711
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- ALUMINIUM COMPOUNDS; ARSENIDES; ELECTRIC CONDUCTIVITY; ELECTRON DIFFRACTION; GALLIUM ARSENIDES; GALLIUM COMPOUNDS; LASER MATERIALS; MEETINGS; MICROELECTRONICS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR LASERS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; EPITAXY; GALLIUM COMPOUNDS; LASERS; MATERIALS; MICROSCOPY; PHYSICAL PROPERTIES; PNICTIDES; SCATTERING; SEMICONDUCTOR DEVICES; SOLID STATE LASERS
Optional Information
- Notes
- 2 refs