Published December 1, 2019 | Version v1
Journal article

On the transference of Love-type waves in pre-stressed PZT-5H material stick on SiO2 material with irregularity

  • 1. Department of Mathematics and Computing, Indian Institute of Technology (Indian School of Mines), Dhanbad, 826004 (India)
  • 2. Department of Applied Mathematics, South Valley University (Egypt)

Description

The present article studies the of Love-type wave propagation in irregular functionally graded piezoelectric material (FGPM) resting over elastic half-space with irregular boundary. Perturbation method has been employed in solution part when dealing with equations of motion that manifests the velocity profile of Love type wave for electrical short and electrical open condition. The significant effect of irregularity size, initial stress and gradient factor of FGPM layered structure has been remarkably traced out. Numerical example has been taken for graphical illustration. Moreover a comprehensive study has been carried out for validity of the work in light of published work. The outcomes of the study may be used as benchmark and theoretical basis for investigation and design of piezoelectric probes, coupled composite structure, Love wave sensor and acoustic devices as well. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/2053-1591/ab5544

Additional details

Identifiers

Publishing Information

Journal Title
Materials Research Express (Online)
Journal Volume
6
Journal Issue
12
Journal Page Range
[22 p.]
ISSN
2053-1591

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
52014244
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
EQUATIONS OF MOTION; PERTURBATION THEORY; PIEZOELECTRICITY; SEISMIC SURFACE WAVES; SILICA; SILICON OXIDES; WAVE PROPAGATION
Descriptors DEC
CHALCOGENIDES; DIFFERENTIAL EQUATIONS; ELECTRICITY; EQUATIONS; MINERALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PARTIAL DIFFERENTIAL EQUATIONS; SEISMIC WAVES; SILICON COMPOUNDS