Rapid Thermal Processing of Implanted GaN up to 1500 Degree C

GaN implanted with donor (Si, S, Se, Te) or acceptor (Be, Mg, C) species was annealed at 900-1500 C using AlN encapsulation. No redistribution was measured by SIMS for any of the dopants and effective diffusion coefficients are le2 x 10-13 cm2 · s-1 at 1400 C, except Be, which displays damage-enhanced diffusion at 900 C and is immobile once the point defect concentration is removed. Activation efficiency of approximately90% is obtained for Si at 1400 C. TEM of the implanted material shows a strong reduction in lattice disorder at 1400-1500 C compared to previous results at 1100 C. There is minimal interaction of the sputtered AlN with GaN under our conditions, and it is readily removed selectively with KOH.