Published November 1983
| Version v1
Journal article
Hot ion doping of p-InSb with sulphur (properties of n-p junctions)
- 1. Moskovskij Gosudarstvennyj Univ. (USSR). Nauchno-Issledovatel'skij Inst. Mekhaniki
Description
A study was made on n-p junctions, produced by ''hot'' doping with sulphur ions of p-type indium antimonide. The chosen conditions of ion implantation (E=40 keV ion energy, Tsub(irr)=290 deg C irradiation temperature, j=2.0 μA/sm2 ion current denisty, D=3.75-6.25x1014 sm-2 dose interval) provide low degree of crystal disorder. The basic contribution into the current of forward VAC branch of p-n junctions is made by the diffusion component (eta approximately 1.23). The back VAC branch is characterized by low value of back J=5x10-7 A/sm2 current at U=2-4 V and high values of Usub(br)=112 V break down voltage
Additional details
Additional titles
- Original title (Russian)
- Горячее ионное легирование п-InSb серой (свойства н-п-переходов)
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 17
- Journal Issue
- 11
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 1923-1925
- ISSN
- 0015-3222
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 15039688
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANTIMONIDES; ELECTRIC CONDUCTIVITY; INDIUM COMPOUNDS; ION IMPLANTATION; KEV RANGE 10-100; LOW TEMPERATURE; MONOCRYSTALS; P-N JUNCTIONS; SULFUR IONS; VERY LOW TEMPERATURE
- Descriptors DEC
- ANTIMONY COMPOUNDS; ATOMIC IONS; CHARGED PARTICLES; CRYSTALS; ELECTRICAL PROPERTIES; ENERGY RANGE; IONS; KEV RANGE; PHYSICAL PROPERTIES; SEMICONDUCTOR JUNCTIONS
Optional Information
- Notes
- For English translation see the journal Soviet Physics - Semiconductors (USA).