Published August 1, 2012 | Version v1
Journal article

The influence of nitrogen vacancies on the magnetic behaviour of rare-earth nitrides

  • 1. MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Chemical and Physical Sciences, Victoria University of Wellington, P.O. Box 600, Wellington (New Zealand)
  • 2. Institut Néel, Centre National de la Recherche Scientifique and Université Joseph Fourier, B.P. 166, F-38042 Grenoble Cedex (France)

Description

The rare-earth nitrides are ferromagnetic semiconductors with promise for spintronic devices. Their most common dopants are nitrogen vacancies (VN), with a small enough energy of formation that they exist at of order 1% in epitaxial films. Here we report preliminary investigations of their effect on the magnetic states of two of them in the series, GdN and EuN. In the former we find an enhanced Curie temperature at very high VN concentration, and the Eu2+ ions associated with VN in the latter show strong exchange with their Eu3+ neighbours that might form the basis of a diluted magnetic semiconductor.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physb.2011.08.004

Additional details

Identifiers

DOI
10.1016/j.physb.2011.08.004;
PII
S0921-4526(11)00742-3;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
407
Journal Issue
15
Journal Page Range
p. 2954-2956
ISSN
0921-4526
CODEN
PHYBE3

Conference

Title
26. international conference on defects in semiconductors
Dates
18-22 Jul 2011
Place
Nelson (New Zealand)

Optional Information

Copyright
Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.