High-performance polycrystalline silicon thin-film transistors integrating sputtered aluminum-oxide gate dielectric with bridged-grain active channel

Polycrystalline silicon thin-film transistors (TFTs) integrating sputtered Al2O3 gate dielectric with bridged-grain active channel are demonstrated. The proposed TFTs exhibit excellent device performance in terms of smaller threshold voltage, steeper subthreshold swing and higher on-current/off-current ratio. More importantly, the mobility of the proposed TFT is 5.5 times that of conventional TFTs with SiO2 gate dielectric. All of these results suggest that the proposed TFT is a good choice for low-power and high-speed driving circuits in display application. (paper)