Published June 1, 2010 | Version v1
Journal article

Enhanced dielectric properties of lead barium zirconate thin films by manganese doping

  • 1. School of Materials and Metallurgy, Inner Mongolia University of Science and Technology, Baotou 014010 (China)
  • 2. Functional Materials Research Laboratory, Tongji University, Shanghai 200092 (China)
  • 3. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China)

Description

(Pb0.5Ba0.5)ZrO3 (PBZ) and 1 mol% Mn-doped (Pb0.5Ba0.5)ZrO3 (Mn-PBZ) sol were successfully fabricated, and corresponding thin films were deposited on Pt(1 1 1)/TiO2/SiO2/Si(1 0 0) substrates by spin-coating method. Effects of Mn doping on the microstructure and electrical properties of PBZ thin films were investigated systemically. X-ray diffraction patterns showed that both films had a polycrystalline perovskite structure, and that the degree of (1 1 1) orientation were increased by Mn doping. Dielectric measurements illustrated that Mn-doped PBZ thin films not only had a larger dielectric constant, but also possessed a smaller dielectric loss. Accordingly, the tunability and the figure of merit of PBZ films were improved by Mn doping.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.apsusc.2010.02.089

Additional details

Identifiers

DOI
10.1016/j.apsusc.2010.02.089;
PII
S0169-4332(10)00291-6;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
256
Journal Issue
16
Journal Page Range
p. 4902-4905
ISSN
0169-4332
CODEN
ASUSEE

Optional Information

Copyright
Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.