Published April 2014 | Version v1
Journal article

Effective embedded-atom potential for metallic adsorbates on crystalline surfaces

  • 1. Institut Lumière Matière, UMR 5306 Université Claude Bernard Lyon 1 - CNRS, Université de Lyon, 10 rue Ada Byron, F 69622 Villeurbanne Cedex (France)

Description

Based on the embedded-atom method (EAM), an analytical effective potential is developed to model the interaction of a metallic adsorbate on a perfect crystalline substrate, which is also metallic. The many-body character of the original EAM potential is preserved in the adsorbate energy and in the alteration of the substrate energy due to the presence of the adsorbate. A mean-field-type version neglecting corrugation of the substrate is first derived based on rigorous integration of individual monolayers, followed by an approximate form for the perturbation of the substrate energy. Lateral corrugation is subsequently included by additional phenomenological terms respecting the symmetry of the substrate, again preserving the many-body nature of the original potential. The effective model contains four parameters to describe uncorrugated substrates and eight extra parameters to describe every order of the Fourier lateral expansion. These parameters were fitted to reproduce the adsorption energy of a sample of random configurations of realistic 2D and 3D clusters deposited on the (1 1 1) fcc surface, for metals for which popular EAM models have been parametrized. As a simple application, the local relaxation of pre-formed icosahedral or truncated octahedral clusters soft-landed and exposing (1 1 1) faces in epitaxy to the substrate has been simulated at 0 and 300 K. The deformation of small clusters to wet the substrate is correctly captured by the effective model. This agreement with the exact potential suggests that the present model should be useful for treating metallic environments in large-scale surface studies, notably in structural optimization or as a template for more general models parametrized from ab initio data. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0965-0393/22/3/035015

Additional details

Publishing Information

Journal Title
Modelling and Simulation in Materials Science and Engineering
Journal Volume
22
Journal Issue
3
Journal Page Range
[22 p.]
ISSN
0965-0393

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47051022
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ADSORPTION; ATOMS; COMPUTERIZED SIMULATION; DEFORMATION; EPITAXY; FCC LATTICES; MANY-BODY PROBLEM; MEAN-FIELD THEORY; METALS; POTENTIALS; RANDOMNESS; RELAXATION; SUBSTRATES; SURFACES
Descriptors DEC
CRYSTAL GROWTH METHODS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; CUBIC LATTICES; ELEMENTS; SIMULATION; SORPTION; THREE-DIMENSIONAL LATTICES