Published November 2005
| Version v1
Journal article
Some Aspects of the RHEED Behavior of Low-Temperature GaAs Growth
Creators
- 1. Budapest College of Engineering, Institute of Microelectronics and Technology, H-1084 Budapest (Hungary)
- 2. Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, P.O. Box 49, H-1525 Budapest (Hungary)
Description
The reflection high-energy electron diffraction (RHEED) behavior manifested during MBE growth on a GaAs(001) surface under low-temperature (LT) growth conditions is examined in this study. RHEED and its intensity oscillations during LT GaAs growth exhibit some particular behavior. The intensity, phase, and decay of the oscillations depend on the beam equivalent pressure (BEP) ratio and substrate temperature, etc. Here, the intensity dependence of RHEED behavior on the BEP ratio, substrate temperature, and excess of As content in the layer are examined. The change in the decay constant of the RHEED oscillations is also discussed
Additional details
Identifiers
- DOI
- 10.1134/1.2128465;
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 39
- Journal Issue
- 11
- Journal Page Range
- p. 1352-1355
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37031870
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Translation
- Descriptors DEI
- CRYSTAL GROWTH; ELECTRON DIFFRACTION; GALLIUM ARSENIDES; LAYERS; MOLECULAR BEAM EPITAXY; OSCILLATIONS; REFLECTION; SEMICONDUCTOR MATERIALS; SUBSTRATES; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; EPITAXY; GALLIUM COMPOUNDS; MATERIALS; PNICTIDES; SCATTERING
Optional Information
- Notes
- Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 39, 1399-1402 (No. 11, 2005); (c) 2005 Pleiades Publishing, Inc.