Published June 2, 2004 | Version v1
Journal article

Electron- and hole-doping effects on the electronic structure of manganite studied by x-ray absorption spectroscopy

  • 1. Department of Physics, Tamkang University, Tamsui 251, Taiwan (China)
  • 2. Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China)
  • 3. Nuclear Science Centre, Aruna Asaf Ali Marg, New Delhi-110 067 (India)
  • 4. Department of Physics, Aligarh Muslim University, Aligarh-202002 (India)

Description

The electronic structures of hole-doped La0.7Ca0.3MnO3 and electron-doped La0.7Ce0.3MnO3 manganites are investigated by x-ray absorption near-edge structure spectroscopy at the O and Mn K-, and Mn L3,2-edges. The Mn K- and L3,2-edge results show that Ce dopants increase the occupation of the Mn 4p and majority-spin eg orbitals and reduce the positive effective charge of some Mn ions. However, Ce doping also induces holes in O 2p derived states. As for La0.7Ca0.3MnO3, in contrast to previous understanding that Ca doping converts some Mn ions into the Mn4+ state, we find that Ca dopants actually increase the number of majority-spin eg electrons. We find instead that the holes created by Ca dopants are in the O 2p derived states

Availability note (English)

Available online at http://stacks.iop.org/0953-8984/16/3791/cm4_21_027.pdf or at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-648X) http://www.iop.org/

Additional details

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
16
Journal Issue
21
Journal Page Range
p. 3791-3799
ISSN
0953-8984
CODEN
JCOMEL