Published 1990
| Version v1
Book
Lateral distribution of metallic impurities in silicon bicrystals investigated by scanning MCTS
Creators
- 1. Centre de Recherches Nucleaires, Lab. PHASE, 23 Rue du Loess, F-67037 Strasbourg Cedex (France)
Description
Scanning minority carrier transient spectroscopy (SMCTS) is introduced as a tool to study interactions of impurities with extended defects. After discussion of the optimum working conditions, the influence of the sample surface preparation on the MCTS response is shown. Consequences for the SMCTS measurements are described. Finally, gold and iron-related defects interactions with grain boundaries are investigated by means of SMCTS
Additional details
Publishing Information
- Publisher
- IEEE Service Center.
- Imprint Place
- Piscataway, NJ (USA)
- Imprint Title
- Twenty first IEEE photovoltaic specialists conference 1990 (Conference Record)
- Imprint Pagination
- 1673 p.
- Journal Page Range
- p. 705-710.
Conference
- Title
- 21. Institute for Electrical and Electronics Engineers (IEEE) photovoltaic specialists conference.
- Dates
- 21-25 May 1990.
- Place
- Kissimmee, FL (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 22054844
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHEMICAL REACTION KINETICS; CRYSTAL DEFECTS; ENERGY LEVELS; GOLD; GRAIN BOUNDARIES; IMPURITIES; IRON; OPTIMIZATION; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SILICON SOLAR CELLS; SPECTROSCOPY; TRANSIENTS
- Descriptors DEC
- CRYSTAL STRUCTURE; DIRECT ENERGY CONVERTERS; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; KINETICS; MATERIALS; METALS; MICROSTRUCTURE; REACTION KINETICS; SOLAR CELLS; TRANSITION ELEMENTS
Optional Information
- Secondary number(s)
- CONF-900542--.