Published 1990 | Version v1
Book

Lateral distribution of metallic impurities in silicon bicrystals investigated by scanning MCTS

  • 1. Centre de Recherches Nucleaires, Lab. PHASE, 23 Rue du Loess, F-67037 Strasbourg Cedex (France)

Description

Scanning minority carrier transient spectroscopy (SMCTS) is introduced as a tool to study interactions of impurities with extended defects. After discussion of the optimum working conditions, the influence of the sample surface preparation on the MCTS response is shown. Consequences for the SMCTS measurements are described. Finally, gold and iron-related defects interactions with grain boundaries are investigated by means of SMCTS

Additional details

Publishing Information

Publisher
IEEE Service Center.
Imprint Place
Piscataway, NJ (USA)
Imprint Title
Twenty first IEEE photovoltaic specialists conference 1990 (Conference Record)
Imprint Pagination
1673 p.
Journal Page Range
p. 705-710.

Conference

Title
21. Institute for Electrical and Electronics Engineers (IEEE) photovoltaic specialists conference.
Dates
21-25 May 1990.
Place
Kissimmee, FL (USA).

Optional Information

Secondary number(s)
CONF-900542--.