Published August 1988
| Version v1
Journal article
5-20 keV As+ and BF2+ implantation and rapid thermal annealing for forming ultra-shallow junctions
Creators
- 1. Academia Sinica, Shanghai, SH (China). Shanghai Inst. of Metallurgy
Description
As+ and BF2+ were implanted in Si with energies ranging from 5 to 20 keV and doses ranging from 5 x 1014 /cm2 to 5 x 1015/cm2. Rapid thermal annealing (RTA) is used to activate implants and control their diffusive redistribution. The results indicate that abrupt n+-p and p+-n junctions as shallow as 100nm can be produced with corresponding sheet plane resistances as low as 60Ω
Additional details
Publishing Information
- Journal Title
- Nuclear Techniques
- Journal Volume
- 11
- Journal Issue
- 8
- Series
- Nucl. Tech.
- Journal Page Range
- 13-16
- ISSN
- 0253-3219
- CODEN
- NUTED
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 20073347
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; ARSENIC IONS; BORON FLUORIDES; ELECTRICAL PROPERTIES; FABRICATION; ION IMPLANTATION; KEV RANGE 01-10; KEV RANGE 10-100; SEMICONDUCTOR JUNCTIONS; SILICON
- Descriptors DEC
- ATOMIC IONS; BORON COMPOUNDS; CHARGED PARTICLES; ELEMENTS; ENERGY RANGE; FLUORIDES; FLUORINE COMPOUNDS; HALIDES; HALOGEN COMPOUNDS; HEAT TREATMENTS; IONS; KEV RANGE; PHYSICAL PROPERTIES; SEMIMETALS