Study of the conductance and structure characteristics of C60/Sb bilayers

The electrical and structural properties of C60/Sb bilayers were investigated. In situ direct-current conductivity measurement results indicate that the doping of Sb into C60 induces the C60 order-disorder phase transition temperature to increase to ∼278 K. According to the results of a transmission electron microscope and atomic force microscope study, such a transition (near 278 K) implies the formation of an interfacial structure of Sb-doped C60. Annealing and the absorption of gases destroy the interfacial structure of Sb-doped C60. A possible mechanism for such a phase transition is discussed. (author)