Published May 2008 | Version v1
Journal article

Characterization of the long time oxidation protection of fluorine implanted technical TiAl-alloys using ion beam methods

  • 1. Karl-Winnacker-Institut der Dechema e.V., Theodor-Heuss-Allee 25, 60486 Frankfurt am Main (Germany)
  • 2. Institut fuer Kernphysik (IKF), Johann Wolfgang Goethe-Universitaet, Max-von-Laue-Strasse 1, 60438 Frankfurt am Main (Germany)

Description

In the present work the oxidation resistance of fluorine treated technical TiAl-alloys was investigated. Single and double fluorine beam line implantation was found to improve the high temperature oxidation resistance of this class of materials with Al-contents higher than 40 at.%. Calculated and measured fluorine depth profiles were compared. It was shown that the alloying elements do not modify significantly the fluorine profile and do not disturb the halogen effect. After single and double fluorine implantation and for different oxidation stages (isothermal/thermocyclic conditions) the maximum of the fluorine profile was measured by PIGE (Proton Induced Gamma Emission). The fluorine maximum was found to be located at the metal/oxide interface. The time dependence of the fluorine profile was determined as well. Double implantation led to a slower growing alumina layer. In this case a F-reservoir is obtained and improves the long term oxidation resistance of TiAl-based alloys

Availability note (English)

Available from http://dx.doi.org/10.1016/j.nimb.2008.03.024

Additional details

Identifiers

DOI
10.1016/j.nimb.2008.03.024;
PII
S0168-583X(08)00286-3;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
Journal Volume
266
Journal Issue
10
Journal Page Range
p. 2441-2445
ISSN
0168-583X
CODEN
NIMBEU

Conference

Title
9. European conference on accelerators in applied research and technology
Acronym
ECAART-9
Dates
3-7 Sep 2007
Place
Florence (Italy)

Optional Information

Copyright
Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.