A comparative study of swelling, strain and radiation damage of high-energy proton-bombarded GaAs, GaP, InP, Si and Ge single crystals

Swelling is studied on GaAs, GaP, InP, Si and Ge implanted with 0.3 and 1.2 MeV protons in the range of fluences D=1015-8x1017 cm-2, for several proton energies, implantation and annealing temperatures (T=300-650 K). Within the region of the ''buried'' damaged layer all materials exhibit a volume dilation whereas in the near-surface layer only GaAs, GaP and Ge show considerable expansion and InP contracts due to the proton bombardment. For the interpretation of the results additional measurements of strain and damage density are taken into consideration. (orig.)