Published May 2019 | Version v1
Journal article Metadata-only

Electronic and Optical Properties of NiSi2/Si Nanofilms

Creators

  • 1. Tashkent State Technical University (Uzbekistan)

Description

Optimum conditions for ion implantation and subsequent annealing for the fabrication of NiSi2/Si (111) nanofilms with a thickness of 3.0–6.0 nm are determined. It is demonstrated that the energy-band parameters and optical properties typical of thick NiSi2 films start to set in at d = 5.0–6.0 nm.

Additional details

Identifiers

DOI
10.1134/S1063784219050244;

Publishing Information

Journal Title
Technical Physics
Journal Volume
64
Journal Issue
5
Journal Page Range
p. 708-710
ISSN
1063-7842

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
51091670
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
ANNEALING; FABRICATION; ION IMPLANTATION; NANOFILMS; NICKEL SILICIDES; OPTICAL PROPERTIES; SILICON; THICKNESS
Descriptors DEC
DIMENSIONS; ELEMENTS; FILMS; HEAT TREATMENTS; MATERIALS; NANOMATERIALS; NICKEL COMPOUNDS; PHYSICAL PROPERTIES; SEMIMETALS; SILICIDES; SILICON COMPOUNDS; THIN FILMS; TRANSITION ELEMENT COMPOUNDS

Optional Information

Copyright
Copyright (c) 2019 Pleiades Publishing, Ltd.