On-tip sub-micrometer Hall probes for magnetic microscopy prepared by AFM lithography
- 1. Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9, 84104 Bratislava (Slovakia)
- 2. Institute of Informatiics, Slovak Academy of Sciences, Dubravska cesta 9, 845 07 Bratislava (Slovakia)
Description
We developed a technology of sub-micrometer Hall probes for future application in scanning hall probe microscopy (SHPM) and magnetic force microscopy (MFM). First, the Hall probes of ∼9-μm dimensions are prepared on the top of high-aspect-ratio GaAs pyramids with an InGaP/AlGaAs/GaAs active layer using wet-chemical etching and non-planar lithography. Then we show that the active area of planar Hall probes can be downsized to sub-micrometer dimensions by local anodic oxidation technique using an atomic force microscope. Such planar probes are tested and their noise and magnetic field sensitivity are evaluated. Finally, the two technologies are combined to fabricate sub-micrometer Hall probes on the top of high-aspect ratio mesa for future SHPM and MFM techniques.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.ultramic.2009.03.018Additional details
Identifiers
- DOI
- 10.1016/j.ultramic.2009.03.018;
- PII
- S0304-3991(09)00092-8;
Publishing Information
- Journal Title
- Ultramicroscopy (Amsterdam)
- Journal Volume
- 109
- Journal Issue
- 8
- Journal Page Range
- p. 1080-1084
- ISSN
- 0304-3991
- CODEN
- ULTRD6
Conference
- Title
- 10. international scanning probe microscopy conference
- Dates
- 22-24 Jun 2008
- Place
- Seattle, WA (United States)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44102472
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM ARSENIDES; ASPECT RATIO; ATOMIC FORCE MICROSCOPY; ETCHING; GALLIUM ARSENIDES; HALL EFFECT; HETEROJUNCTIONS; INDIUM PHOSPHIDES; LAYERS; MAGNETIC FIELDS; MASKING; NOISE; OXIDATION; PROBES; SEMICONDUCTOR JUNCTIONS; SENSITIVITY
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CHEMICAL REACTIONS; DIMENSIONLESS NUMBERS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MICROSCOPY; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SEMICONDUCTOR JUNCTIONS; SURFACE FINISHING
Optional Information
- Copyright
- Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.