A boosted enhancement of light extraction from GaN-based light-emitting diodes (LEDs) with a 3-dimensional nanocone-shaped platform
Description
We report on dramatically enhanced light extraction from GaN-based light-emitting diodes (LEDs) with a 3-dimensional nanocone-shaped platform on a p-GaN surface. The nanocone-shaped platform LEDs were fabricated by using nanoimprint lithography (NIL) with a flexible nanostamp replicated from a well-ordered anodic alumina template. These soft lithographic approaches make it possible to pattern efficiently over a large area with a high-resolution. When we compared our LEDs with a nanocone-shaped platform to other conventional planar LEDs, unexpectedly, we observed boosted light extraction from the LEDs with a nanocone-shaped platform. That is mainly ascribed to the engraved nanocone-shaped patterns on the p-GaN surface, which provided a more favorable environment for photon extraction.
Additional details
Publishing Information
- Journal Title
- Journal of the Korean Physical Society
- Journal Volume
- 62
- Journal Issue
- 1
- Series
- 18 refs, 5 figs
- Journal Page Range
- p. 1-5
- ISSN
- 0374-4884
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 46011737
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM OXIDES; ATOMIC FORCE MICROSCOPY; EXTRACTION; FABRICATION; GALLIUM NITRIDES; LIGHT EMITTING DIODES; NANOSTRUCTURES; PHOTOLUMINESCENCE; P-TYPE CONDUCTORS
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CHALCOGENIDES; EMISSION; GALLIUM COMPOUNDS; LUMINESCENCE; MATERIALS; MICROSCOPY; NITRIDES; NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SEPARATION PROCESSES