Defect formation in artificial diamond under high energy ion implantation

Cathodo- and photoluminescence methods were used to investigate centers conditioned with impurity and intrinsic defects introduced to a synthetic diamond with 82 MeV carbon ion implantation. Observed line broadening, weakening of temperature effect on spectral characteristics of centers, peculiarities of these center behaviour during annealing are attributed to, firstly, the presence of a metastable defect structure in synthetic diamond unlike natural one and, secondly, to the decrease of electron-phonon interaction in crystals irradiated with high energy ions