Published June 1971 | Version v1
Journal article Metadata-only

Rapid annealing of pulse-radiation-induced space charge in silicon dioxide

Creators

  • 1. Research Triangle Inst., Durham, N.C. (USA)

Description

Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation M. Simons, H. L. Hughes; Rapid Annealing of Pulse‐Radiation‐Induced Space Charge in Silicon Dioxide. J. Appl. Phys. 1 June 1971; 42 (7): 3000–3001. https://doi.org/10.1063/1.1660663 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioJournal of Applied Physics Search Advanced Search |Citation Search

Additional details

Identifiers

DOI
10.1063/1.1660663;

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
42
Journal Issue
7
Series
J. Appl. Phys.
Journal Page Range
3000-3001
ISSN
0021-8979

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
3014836
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
No Abstract
Descriptors DEI
ANNEALING; CAPACITORS; ELECTRIC CHARGES; ELECTRIC POTENTIAL; ELECTRONS; IRRADIATION; PULSES; RADIATION EFFECTS; SILICON OXIDES; SPACE CHARGE; TIME DEPENDENCE

Optional Information

Notes
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