Published 1999
| Version v1
Journal article
Concentration of defects in clusters formed in irradiated n-Si
- 1. Institut Yadernykh Issledovanij, Kyiv (Ukraine)
Description
Defect concentration dependence on doping level for average cluster in n-Si were calculated.It was shown,that the defect concentration in average cluster in the framework of the Gossick model is inversely proportional to the square of a cluster radius.One obtains the distribution of defect cluster by dimension
Additional details
Additional titles
- Original title (Ukrainian)
- Kontsentratsyiya defektyiv u skupchennyakh, yakyi stvorenyi v n
Publishing Information
- Journal Title
- Zbyirnik naukovikh prats' Yinstitutu Yadernikh Doslyidzhen'
- Journal Issue
- no.1
- Journal Page Range
- p. 200-202
- ISSN
- 1606-6723
Conference
- Title
- Annual Scientific Conference at the Institute for Nuclear Research
- Original Conference Title
- Shchoryichna naukova Konferentsyiya Yinstitutu Yadernikh Doslyidzhen'
- Dates
- 19-21 Jan 1999
- Place
- Kyiv (Ukraine)
INIS
- Country of Publication
- Ukraine
- Country of Input or Organization
- Ukraine
- INIS RN
- 33015035
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BORN APPROXIMATION; CRYSTAL DEFECTS; ELECTRON MOBILITY; FAST NEUTRONS; N-TYPE CONDUCTORS; NEUTRON FLUENCE; PHYSICAL RADIATION EFFECTS; SI SEMICONDUCTOR DETECTORS; SOLID CLUSTERS
- Descriptors DEC
- BARYONS; CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; FERMIONS; HADRONS; MATERIALS; MEASURING INSTRUMENTS; MOBILITY; NEUTRONS; NUCLEONS; PARTICLE MOBILITY; RADIATION DETECTORS; RADIATION EFFECTS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR MATERIALS