Published September 2009
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Influence of fast neutrons on the electro-physical properties of neutron-doped p-type silicon
- 1. Institute of Nuclear Physics, Tashkent (Uzbekistan)
Description
no abstract available
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40106927.pdf
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Additional details
Publishing Information
- Publisher
- Ozbekiston Respublikasi Fanlar Akademiyasi Yadro Fisikasi Instituti
- Imprint Place
- Tashkent (Uzbekistan)
- Imprint Title
- Abstracts of the seventh international conference on modern problems of nuclear physics
- Imprint Pagination
- 288 p.
- Journal Page Range
- p. 178-179
- Report number
- INIS-UZ--161
Conference
- Title
- 7. International conference on modern problems of nuclear physics
- Dates
- 22-25 Sep 2009
- Place
- Tashkent (Uzbekistan)
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 40106927
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ANNEALING; DEFECTS; DENSITY; DOPED MATERIALS; ELECTRICAL PROPERTIES; FAST NEUTRONS; NEUTRON FLUX; PHOSPHORS; PHOSPHORUS IONS; POTENTIALS; SILICON; SLOW NEUTRONS; SOLDERING; SULFUR IONS; TEMPERATURE RANGE 0273-0400 K
- Descriptors DEC
- BARYONS; CHARGED PARTICLES; ELEMENTARY PARTICLES; ELEMENTS; FABRICATION; FERMIONS; HADRONS; HEAT TREATMENTS; IONS; JOINING; MATERIALS; NEUTRONS; NUCLEONS; PHYSICAL PROPERTIES; RADIATION FLUX; SEMIMETALS; TEMPERATURE RANGE; WELDING
Optional Information
- Notes
- 1 fig.