Effect of phosphorus ion implantation on crystallization of amorphous silicon films under exposure to excimer laser radiation pulses

The effect of implanted phosphorus ions on the crystallization of thin amorphous silicon films under the action of nanosecond radiation pulses of a XeCl excimer laser is studied. The amorphous silicon films with a thickness of 90 nm on glass substrates, were implanted with phosphorus ions at a dose of 3 x 1014 and 3 x 1015 cm-2. The subsequent laser treatments were performed using energies both above and below a threshold corresponding to the fusion of amorphous silicon. The structure of the silicon films was studied using Raman spectroscopy. The conclusion is made that implanted phosphorus stimulates nucleation, especially in the case of liquid phase crystallization