Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasers
Creators
- 1. Department of Science and Technology, Linkoeping University, SE-601 74 Norrkoeping (Sweden)
- 2. Institut fuer Experimentelle Physik II, Universitaet Leipzig, Linnestrasse 5, D-04103 Leipzig (Germany)
- 3. Institute of Semiconductor Technology, Technical University of Braunschweig, Hans-Sommer-Strasse 66, D-38106 Braunschweig (Germany)
- 4. National Center for Scientific Research 'Demokritos', Institute of Materials Science, GR 15310 Agia Paraskevi Attikis, Athens (Greece)
- 5. CEA-CNRS Group 'Nanophysique et Semiconducteurs', Institut Neel, CNRS and Universit'e Joseph Fourier, F-38042 Grenoble (France)
Description
Zinc oxide (ZnO), with its excellent luminescent properties and the ease of growth of its nanostructures, holds promise for the development of photonic devices. The recent advances in growth of ZnO nanorods are discussed. Results from both low temperature and high temperature growth approaches are presented. The techniques which are presented include metal-organic chemical vapour deposition (MOCVD), vapour phase epitaxy (VPE), pulse laser deposition (PLD), vapour-liquid-solid (VLS), aqueous chemical growth (ACG) and finally the electrodeposition technique as an example of a selective growth approach. Results from structural as well as optical properties of a variety of ZnO nanorods are shown and analysed using different techniques, including high resolution transmission electron microscopy (HR-TEM), scanning electron microscopy (SEM), photoluminescence (PL) and cathodoluminescence (CL), for both room temperature and for low temperature performance. These results indicate that the grown ZnO nanorods possess reproducible and interesting optical properties. Results on obtaining p-type doping in ZnO micro- and nanorods are also demonstrated using PLD. Three independent indications were found for p-type conducting, phosphorus-doped ZnO nanorods: first, acceptor-related CL peaks, second, opposite transfer characteristics of back-gate field effect transistors using undoped and phosphorus doped wire channels, and finally, rectifying I-V characteristics of ZnO:P nanowire/ZnO:Ga p-n junctions. Then light emitting diodes (LEDs) based on n-ZnO nanorods combined with different technologies (hybrid technologies) are suggested and the recent electrical, as well as electro-optical, characteristics of these LEDs are shown and discussed. The hybrid LEDs reviewed and discussed here are mainly presented for two groups: those based on n-ZnO nanorods and p-type crystalline substrates, and those based on n-ZnO nanorods and p-type amorphous substrates. Promising electroluminescence characteristics aimed at the development of white LEDs are demonstrated. Although some of the presented LEDs show visible emission for applied biases in excess of 10 V, optimized structures are expected to provide the same emission at much lower voltage. Finally, lasing from ZnO nanorods is briefly reviewed. An example of a recent whispering gallery mode (WGM) lasing from ZnO is demonstrated as a way to enhance the stimulated emission from small size structures. (topical review)
Availability note (English)
Available from http://dx.doi.org/10.1088/0957-4484/20/33/332001Additional details
Identifiers
- DOI
- 10.1088/0957-4484/20/33/332001;
- PII
- S0957-4484(09)11311-9;
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 20
- Journal Issue
- 33
- Journal Page Range
- [40 p.]
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42071526
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- CATHODOLUMINESCENCE; CHEMICAL VAPOR DEPOSITION; DOPED MATERIALS; ELECTRODEPOSITION; ELECTROLUMINESCENCE; ENERGY BEAM DEPOSITION; FIELD EFFECT TRANSISTORS; LASER RADIATION; LIGHT EMITTING DIODES; OPTICAL PROPERTIES; PERFORMANCE; PHOSPHORUS; PHOTOLUMINESCENCE; P-N JUNCTIONS; PULSED IRRADIATION; QUANTUM WIRES; SCANNING ELECTRON MICROSCOPY; STIMULATED EMISSION; TEMPERATURE RANGE 0273-0400 K; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL COATING; CRYSTAL GROWTH METHODS; DEPOSITION; ELECTROLYSIS; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; ELEMENTS; EMISSION; ENERGY-LEVEL TRANSITIONS; EPITAXY; IRRADIATION; LUMINESCENCE; LYSIS; MATERIALS; MICROSCOPY; NANOSTRUCTURES; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; PHYSICAL PROPERTIES; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SURFACE COATING; TEMPERATURE RANGE; TRANSISTORS; ZINC COMPOUNDS