Published 1984
| Version v1
Miscellaneous
2-D impurity states associated with inversion layers
- 1. Instituto de Pesquisas Espaciais, Sao Jose dos Campos (Brazil)
Description
We obtain the density of states for electrons at the inversion layer of a MOS structure due to Na+ impurities located in the oxide. The impurity potential is assumed unscreened. We take account of disorder to obtain the configurational averaged Green's function starting from a tight binding Hamiltonian. (Author)
Abstract (Portuguese)
Obtem-se a densidade de estados eletronicos na camada de inversao de uma estrutura MOS devida a impurezas Na+ localizadas no oxido. O potencial da impureza e suposto nao-blindado. A desordem e levada em conta na obtencao da funcao de Green configuracional partindo de um Hamiltoniano de ligacao forte. (M.W.O.)Additional details
Additional titles
- Original title (no language)
- Anais do Simposio Latino-Americano de Fisica dos Sistemas Amorfos - v. 2.
Publishing Information
- Imprint Title
- Proceedings of the Latin American Symposium of Physics of Amorphous Systems - v. 2
- Imprint Pagination
- 265 p.
- Journal Page Range
- p. 334-338.
- Report number
- INIS-BR--903
Conference
- Title
- Latin American Symposium of Physics of Amorphous Systems.
- Dates
- 27 Feb - 2 Mar 1984.
- Place
- Niteroi, RJ (Brazil).
INIS
- Country of Publication
- Brazil
- Country of Input or Organization
- Brazil
- INIS RN
- 18096337
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ELECTRON DENSITY; SEMICONDUCTOR MATERIALS; SILICON OXIDES; TWO-DIMENSIONAL CALCULATIONS
- Descriptors DEC
- CHALCOGENIDES; MATERIALS; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS
Optional Information
- Notes
- Imprint:Anais do Simposio Latino-Americano de Fisica dos Sistemas Amorfos - v. 2.